FQA11N90
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 900V 11.4A TO3P
$4.80
Available to order
Reference Price (USD)
1+
$4.80000
500+
$4.752
1000+
$4.704
1500+
$4.656
2000+
$4.608
2500+
$4.56
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the FQA11N90 by Fairchild Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the FQA11N90 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 960mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Rohm Semiconductor
R6576KNZ4C13
Diodes Incorporated
DMTH4004LK3-13
onsemi
FQP6N40C
Fairchild Semiconductor
FDS6670S
STMicroelectronics
STP46N60M6
Vishay Siliconix
SI4835DDY-T1-E3
onsemi
2SK669K-AC
Fairchild Semiconductor
RFP45N06
onsemi
FDB28N30TM
Toshiba Semiconductor and Storage