FQA11N90C-F109
onsemi
onsemi
MOSFET N-CH 900V 11A TO3P
$0.00
Available to order
Reference Price (USD)
1+
$4.71000
10+
$4.22600
450+
$3.16222
900+
$2.58930
1,350+
$2.42560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FQA11N90C-F109 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FQA11N90C-F109 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Infineon Technologies
IPS70R600CEAKMA1
onsemi
CPH3360-TL-W
Toshiba Semiconductor and Storage
2SK2845(TE16L1,Q)
NXP USA Inc.
BUK7C1R2-40EJ
Toshiba Semiconductor and Storage
2SJ438(CANO,Q,M)
Vishay Siliconix
SUM09N20-270-E3
Infineon Technologies
IRF6898MTRPBF
Infineon Technologies
IRF3710ZSTRRPBF
IXYS
IXFH88N20Q
Vishay Siliconix