FQB25N33TM
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 330V 25A D2PAK
$1.38
Available to order
Reference Price (USD)
1+
$1.38000
500+
$1.3662
1000+
$1.3524
1500+
$1.3386
2000+
$1.3248
2500+
$1.311
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the FQB25N33TM by Fairchild Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The FQB25N33TM stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Fairchild Semiconductor.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 330 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NVTFS5C466NLTAG
Vishay Siliconix
IRLZ24SPBF
STMicroelectronics
STH170N8F7-2
Renesas Electronics America Inc
UPA2762UGR-E1-AT
Renesas Electronics America Inc
UPA2719GR-E1-A
Infineon Technologies
IRF8788TRPBF
STMicroelectronics
STL50NH3LL
Vishay Siliconix
SIA432DJ-T1-GE3
STMicroelectronics
STW45N65M5
Infineon Technologies