Shopping cart

Subtotal: $0.00

FQB34P10TM-F085

onsemi
FQB34P10TM-F085 Preview
onsemi
MOSFET P-CH 100V 33.5A D2PAK
$0.00
Available to order
Reference Price (USD)
800+
$1.95071
1,600+
$1.82739
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Infineon Technologies

BSS131L6327HTSA1

Infineon Technologies

BSC205N10LS G

Rohm Semiconductor

R5205CNDTL

Infineon Technologies

BSP320S E6327

Toshiba Semiconductor and Storage

2SK3309(Q)

STMicroelectronics

STF13N95K3

Top