FQB7N60TM-WS
Fairchild Semiconductor
Fairchild Semiconductor
FQB7N60 - MOSFET N-CHANNEL SINGL
$0.90
Available to order
Reference Price (USD)
1+
$0.90000
500+
$0.891
1000+
$0.882
1500+
$0.873
2000+
$0.864
2500+
$0.855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FQB7N60TM-WS single MOSFET from Fairchild Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FQB7N60TM-WS combines cutting-edge technology with Fairchild Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Sanyo
MCH6424-TL-E
STMicroelectronics
STL6N2VH5
Vishay Siliconix
SQS482EN-T1_GE3
Infineon Technologies
AUIRFR024NTRL
Taiwan Semiconductor Corporation
TSM070NH04LCR RLG
Infineon Technologies
IRF1010EZPBF
NXP USA Inc.
PMV30XN,215
Infineon Technologies
IPP120N08S404AKSA1
onsemi
NTMFS4955NT3G
IXYS