FQB8N25TM
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 250V 8A D2PAK
$0.59
Available to order
Reference Price (USD)
1+
$0.59000
500+
$0.5841
1000+
$0.5782
1500+
$0.5723
2000+
$0.5664
2500+
$0.5605
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FQB8N25TM by Fairchild Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the FQB8N25TM is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 87W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Rectron USA
RM100N60T7
Nexperia USA Inc.
PMPB85ENEAX
IXYS
IXTT16N20D2
Fairchild Semiconductor
FQA10N80C
Infineon Technologies
IPWS65R050CFD7AXKSA1
Sanyo
3LN03M-TL-E
onsemi
NTD70N03RG
Diodes Incorporated
DMT10H009SK3-13
STMicroelectronics
STN1NF10
Diodes Incorporated