IXTT16N20D2
IXYS

IXYS
MOSFET N-CH 200V 16A TO268
$12.89
Available to order
Reference Price (USD)
1+
$10.92000
10+
$9.82800
30+
$8.95433
120+
$8.08083
270+
$7.42559
510+
$6.77039
1,020+
$5.89680
Exquisite packaging
Discount
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Optimize your power electronics with the IXTT16N20D2 single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXTT16N20D2 combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 695W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA