FQD12N20TM
onsemi
onsemi
MOSFET N-CH 200V 9A DPAK
$1.02
Available to order
Reference Price (USD)
1+
$1.02000
500+
$1.0098
1000+
$0.9996
1500+
$0.9894
2000+
$0.9792
2500+
$0.969
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the FQD12N20TM by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The FQD12N20TM stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IRFP1405PBF
Vishay Siliconix
SI7114DN-T1-E3
IXYS
IXFA60N25X3
Infineon Technologies
IPP040N06NAKSA1
Vishay Siliconix
SIHH28N60E-T1-GE3
Vishay Siliconix
SISH615ADN-T1-GE3
Panasonic Electronic Components
FJ6K01010L
Vishay Siliconix
IRLZ44PBF-BE3
Fairchild Semiconductor
FQPF20N06
Renesas Electronics America Inc