FQI17P06TU
onsemi
onsemi
MOSFET P-CH 60V 17A I2PAK
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Discover the FQI17P06TU from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the FQI17P06TU ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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