FQP11P06
Fairchild Semiconductor
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
$0.00
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Reference Price (USD)
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$1.07000
10+
$0.94500
100+
$0.74680
500+
$0.57914
1,000+
$0.45722
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Discover the FQP11P06 from Fairchild Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the FQP11P06 ensures reliable performance in demanding environments. Upgrade your circuit designs with Fairchild Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 175mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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