Shopping cart

Subtotal: $0.00

FQU5N60CTU

onsemi
FQU5N60CTU Preview
onsemi
MOSFET N-CH 600V 2.8A IPAK
$1.03
Available to order
Reference Price (USD)
1+
$1.25000
10+
$1.10500
100+
$0.87320
500+
$0.67716
1,000+
$0.53460
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Related Products

Infineon Technologies

IPP60R360CFD7XKSA1

Vishay Siliconix

IRL540STRLPBF

Infineon Technologies

IPA057N06N3GXKSA1

Vishay Siliconix

SIHG14N50D-E3

Alpha & Omega Semiconductor Inc.

AOTF11N70

Nexperia USA Inc.

PMV65UNEAR

STMicroelectronics

SCT20N120H

Renesas Electronics America Inc

2SK4078-ZK-E1-AY

Top