SCT20N120H
STMicroelectronics
STMicroelectronics
SICFET N-CH 1200V 20A H2PAK-2
$16.43
Available to order
Reference Price (USD)
1+
$16.43000
500+
$16.2657
1000+
$16.1014
1500+
$15.9371
2000+
$15.7728
2500+
$15.6085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SCT20N120H by STMicroelectronics is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose STMicroelectronics for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2Pak-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Renesas Electronics America Inc
2SK4078-ZK-E1-AY
STMicroelectronics
STF24NM60N
Rohm Semiconductor
R6511KNXC7G
onsemi
FQD16N25CTM
Nexperia USA Inc.
BUK6D120-60PX
Fairchild Semiconductor
HUFA76609D3ST_NL
Fairchild Semiconductor
FDD6682
Vishay Siliconix
SI7326DN-T1-E3
Nexperia USA Inc.
PMV90ENER
Infineon Technologies