FS03MR12A6MA1B
Infineon Technologies
Infineon Technologies
HYBRID PACK DRIVE SIC AG-HYBRIDD
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The FS03MR12A6MA1B by Infineon Technologies is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the FS03MR12A6MA1B provides reliable operation under stringent conditions. Infineon Technologies's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: -
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 240mA
- Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 42.5nF @ 600V
- Power - Max: 20mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBRIDD-2
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