FS35R12KE3GBOSA1
Infineon Technologies
Infineon Technologies
FS35R12 - IGBT MODULE
$61.06
Available to order
Reference Price (USD)
10+
$69.60400
Exquisite packaging
Discount
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The FS35R12KE3GBOSA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the FS35R12KE3GBOSA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the FS35R12KE3GBOSA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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