FS200R12N3T7BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO3-4
$331.60
Available to order
Reference Price (USD)
1+
$331.60000
500+
$328.284
1000+
$324.968
1500+
$321.652
2000+
$318.336
2500+
$315.02
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's FS200R12N3T7BPSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FS200R12N3T7BPSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FS200R12N3T7BPSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FS200R12N3T7BPSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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