FS660R08A6P2FBBPSA1
Infineon Technologies
Infineon Technologies
HYBRID PACK DRIVE
$624.00
Available to order
Reference Price (USD)
1+
$624.00000
500+
$617.76
1000+
$611.52
1500+
$605.28
2000+
$599.04
2500+
$592.8
Exquisite packaging
Discount
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Discover the power of Infineon Technologies's FS660R08A6P2FBBPSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FS660R08A6P2FBBPSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FS660R08A6P2FBBPSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 750 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: 1053 W
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBRIDD-1
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