FT150R12KE3B5BDLA1
Infineon Technologies
Infineon Technologies
IGBT MODULE
$199.99
Available to order
Reference Price (USD)
1+
$199.99000
500+
$197.9901
1000+
$195.9902
1500+
$193.9903
2000+
$191.9904
2500+
$189.9905
Exquisite packaging
Discount
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The FT150R12KE3B5BDLA1 from Infineon Technologies is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the FT150R12KE3B5BDLA1 is a reliable choice for both commercial and industrial use. Trust Infineon Technologies to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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