FZ1800R17KF4NOSA1
Infineon Technologies
Infineon Technologies
FZ1800R17 - INSULATED GATE BIPOL
$1,735.16
Available to order
Reference Price (USD)
1+
$1735.16000
500+
$1717.8084
1000+
$1700.4568
1500+
$1683.1052
2000+
$1665.7536
2500+
$1648.402
Exquisite packaging
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The FZ1800R17KF4NOSA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the FZ1800R17KF4NOSA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 3 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 3560 A
- Power - Max: 13500 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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