G1006LE
Goford Semiconductor
Goford Semiconductor
N100V,RD(MAX)<150M@10V,RD(MAX)<1
$0.51
Available to order
Reference Price (USD)
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$0.51000
500+
$0.5049
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$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
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Discover the G1006LE from Goford Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the G1006LE ensures reliable performance in demanding environments. Upgrade your circuit designs with Goford Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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