G23N06K
Goford Semiconductor
Goford Semiconductor
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The G23N06K by Goford Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the G23N06K is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 23A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 38W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
IXYS
IXTA100N15X4
Fairchild Semiconductor
FQAF19N60
Vishay Siliconix
SIHD9N60E-GE3
Rohm Semiconductor
R6007KNJTL
IXYS
IXTT40N50L2
Alpha & Omega Semiconductor Inc.
AOT290L
Fairchild Semiconductor
FDS6162N7
Vishay Siliconix
SISS5710DN-T1-GE3
Alpha & Omega Semiconductor Inc.
AON7522E
Panjit International Inc.