G28N03D3
Goford Semiconductor
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
$0.48
Available to order
Reference Price (USD)
1+
$0.48000
500+
$0.4752
1000+
$0.4704
1500+
$0.4656
2000+
$0.4608
2500+
$0.456
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the G28N03D3 by Goford Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The G28N03D3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Goford Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 20.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3.15x3.05)
- Package / Case: 8-PowerVDFN
Related Products
Goford Semiconductor
06N06L
Vishay Siliconix
SIR638DP-T1-RE3
Diodes Incorporated
DMT6009LJ3
Vishay Siliconix
SI3457CDV-T1-BE3
Fairchild Semiconductor
FDB8442-F085-FS
Wolfspeed, Inc.
E3M0060065D
onsemi
FCPF20N60T
Renesas Electronics America Inc
2SK1589-T2B-A
EPC
EPC2050
onsemi