G2R50MT33K
GeneSiC Semiconductor
GeneSiC Semiconductor
3300V 50M TO-247-4 SIC MOSFET
$325.24
Available to order
Reference Price (USD)
1+
$325.24000
500+
$321.9876
1000+
$318.7352
1500+
$315.4828
2000+
$312.2304
2500+
$308.978
Exquisite packaging
Discount
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Optimize your power electronics with the G2R50MT33K single MOSFET from GeneSiC Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the G2R50MT33K combines cutting-edge technology with GeneSiC Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 3300 V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V
- FET Feature: Standard
- Power Dissipation (Max): 536W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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