G3R12MT12K
GeneSiC Semiconductor
GeneSiC Semiconductor
1200V 12M TO-247-4 G3R SIC MOSFE
$69.18
Available to order
Reference Price (USD)
1+
$69.18000
500+
$68.4882
1000+
$67.7964
1500+
$67.1046
2000+
$66.4128
2500+
$65.721
Exquisite packaging
Discount
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The G3R12MT12K from GeneSiC Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to GeneSiC Semiconductor's G3R12MT12K for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
- Vgs(th) (Max) @ Id: 2.7V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 567W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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