G45P02D3
Goford Semiconductor
Goford Semiconductor
P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<
$0.66
Available to order
Reference Price (USD)
1+
$0.66000
500+
$0.6534
1000+
$0.6468
1500+
$0.6402
2000+
$0.6336
2500+
$0.627
Exquisite packaging
Discount
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The G45P02D3 by Goford Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the G45P02D3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 45A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 80W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3.15x3.05)
- Package / Case: 8-PowerVDFN
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