G5S12002C
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
$3.03
Available to order
Reference Price (USD)
1+
$3.03000
500+
$2.9997
1000+
$2.9694
1500+
$2.9391
2000+
$2.9088
2500+
$2.8785
Exquisite packaging
Discount
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Optimize your electronic designs with the G5S12002C single rectifier diode from Global Power Technology-GPT. This diode, part of the Discrete Semiconductor Products family, offers exceptional rectification efficiency and thermal stability. Its compact design and high current capacity make it suitable for space-constrained applications like mobile devices, laptops, and IoT gadgets. The G5S12002C is also ideal for automotive electronics, including alternators and voltage regulators, where reliability is critical. Global Power Technology-GPT's commitment to innovation ensures that the G5S12002C meets the highest industry standards for performance and longevity.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 8.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 170pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 175°C
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