G65P06D5
Goford Semiconductor
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
$1.52
Available to order
Reference Price (USD)
1+
$1.52000
500+
$1.5048
1000+
$1.4896
1500+
$1.4744
2000+
$1.4592
2500+
$1.444
Exquisite packaging
Discount
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The G65P06D5 single MOSFET from Goford Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the G65P06D5 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (4.9x5.75)
- Package / Case: 8-PowerTDFN
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