G65P06T
Goford Semiconductor
Goford Semiconductor
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
$1.71
Available to order
Reference Price (USD)
1+
$1.71000
500+
$1.6929
1000+
$1.6758
1500+
$1.6587
2000+
$1.6416
2500+
$1.6245
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the G65P06T from Goford Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the G65P06T ensures reliable performance in demanding environments. Upgrade your circuit designs with Goford Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
ZXMN10A08E6TA
Infineon Technologies
IPP80N04S2L03AKSA1
Toshiba Semiconductor and Storage
SSM6J214FE(TE85L,F
onsemi
STD1028T4
Infineon Technologies
BSD314SPE L6327
STMicroelectronics
STD3N95K5AG
Infineon Technologies
AUIRFR8405
Alpha & Omega Semiconductor Inc.
AOB2904
Renesas Electronics America Inc
UPA2719GR-E1-AT
Vishay Siliconix