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GA05JT01-46

GeneSiC Semiconductor
GA05JT01-46 Preview
GeneSiC Semiconductor
TRANS SJT 100V 9A TO46
$0.00
Available to order
Reference Price (USD)
1+
$56.23000
10+
$52.92600
25+
$49.61800
100+
$47.30240
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: -
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 5A
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Operating Temperature: -55°C ~ 225°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-46
  • Package / Case: TO-46-3

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