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GA100JT17-227

GeneSiC Semiconductor
GA100JT17-227 Preview
GeneSiC Semiconductor
TRANS SJT 1700V 160A SOT227
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Specifications

  • Product Status: Obsolete
  • FET Type: -
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 535W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC

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