GB100XCP12-227
GeneSiC Semiconductor
GeneSiC Semiconductor
IGBT MODULE 1200V 100A SOT227
$0.00
Available to order
Reference Price (USD)
1+
$223.62000
10+
$212.82900
25+
$205.63200
Exquisite packaging
Discount
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The GB100XCP12-227 by GeneSiC Semiconductor redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the GB100XCP12-227 in high-efficiency servo controllers for manufacturing automation. GeneSiC Semiconductor combines innovation with quality in every GB100XCP12-227 module.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 8.55 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4
- Supplier Device Package: SOT-227
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