GD2X60MPS06N
GeneSiC Semiconductor
GeneSiC Semiconductor
650V 120A SOT-227 SIC SCHOTTKY
$43.24
Available to order
Reference Price (USD)
1+
$43.24000
500+
$42.8076
1000+
$42.3752
1500+
$41.9428
2000+
$41.5104
2500+
$41.078
Exquisite packaging
Discount
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The GD2X60MPS06N from GeneSiC Semiconductor sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. GeneSiC Semiconductor's rigorous quality control ensures the GD2X60MPS06N maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 70A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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