GE10022
Harris Corporation
Harris Corporation
TRANS NPN DARL 240V 40A TO204AE
$4.40
Available to order
Reference Price (USD)
1+
$4.40000
500+
$4.356
1000+
$4.312
1500+
$4.268
2000+
$4.224
2500+
$4.18
Exquisite packaging
Discount
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Upgrade your electronic designs with the GE10022 Bipolar Junction Transistor (BJT) by Harris Corporation. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the GE10022 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Harris Corporation for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 40 A
- Voltage - Collector Emitter Breakdown (Max): 240 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 20A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 10A, 5V
- Power - Max: 250 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AE
- Supplier Device Package: TO-204AE
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