GHXS100B120S-D3
SemiQ
SemiQ
SIC SBD PARALLEL POWER MODULE 12
$82.31
Available to order
Reference Price (USD)
1+
$82.31000
500+
$81.4869
1000+
$80.6638
1500+
$79.8407
2000+
$79.0176
2500+
$78.1945
Exquisite packaging
Discount
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The GHXS100B120S-D3 from SemiQ sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. SemiQ's rigorous quality control ensures the GHXS100B120S-D3 maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 198A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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