GPA015A120MN-ND
SemiQ
SemiQ
IGBT 1200V 30A 212W TO3PN
$0.00
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Reference Price (USD)
2,500+
$1.46300
Exquisite packaging
Discount
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Enhance your electronic projects with the GPA015A120MN-ND Single IGBT transistor from SemiQ. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the GPA015A120MN-ND ensures precision and reliability. SemiQ's cutting-edge technology guarantees a component that meets the highest industry standards. Choose GPA015A120MN-ND for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: 212 W
- Switching Energy: 1.61mJ (on), 530µJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 25ns/166ns
- Test Condition: 600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 320 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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