IRG4IBC20W
Infineon Technologies
Infineon Technologies
IGBT 600V 11.8A 34W TO220FP
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Upgrade your power management systems with the IRG4IBC20W Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRG4IBC20W provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRG4IBC20W for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 11.8 A
- Current - Collector Pulsed (Icm): 52 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
- Power - Max: 34 W
- Switching Energy: 60µJ (on), 80µJ (off)
- Input Type: Standard
- Gate Charge: 26 nC
- Td (on/off) @ 25°C: 22ns/110ns
- Test Condition: 480V, 6.5A, 50Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: PG-TO220-FP
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