GPA030A135MN-FDR
SemiQ
SemiQ
IGBT 1350V 60A 329W TO3PN
$0.00
Available to order
Reference Price (USD)
2,500+
$2.39400
Exquisite packaging
Discount
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Discover the GPA030A135MN-FDR Single IGBT transistor by SemiQ, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the GPA030A135MN-FDR ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the GPA030A135MN-FDR for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Power - Max: 329 W
- Switching Energy: 4.4mJ (on), 1.18mJ (off)
- Input Type: Standard
- Gate Charge: 300 nC
- Td (on/off) @ 25°C: 30ns/145ns
- Test Condition: 600V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 450 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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