GPA040A120MN-FD
SemiQ
SemiQ
IGBT 1200V 80A 480W TO3PN
$0.00
Available to order
Reference Price (USD)
2,500+
$3.19200
Exquisite packaging
Discount
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The GPA040A120MN-FD Single IGBT transistor by SemiQ is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the GPA040A120MN-FD provides consistent performance in varied conditions. Rely on SemiQ's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
- Power - Max: 480 W
- Switching Energy: 5.3mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 480 nC
- Td (on/off) @ 25°C: 55ns/200ns
- Test Condition: 600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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