IRG7PH35UDPBF
Infineon Technologies
Infineon Technologies
IRG7PH35 - DISCRETE IGBT WITH AN
$0.00
Available to order
Reference Price (USD)
1+
$7.92000
25+
$6.82280
100+
$5.92420
500+
$5.15868
1,000+
$4.49305
Exquisite packaging
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The IRG7PH35UDPBF Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IRG7PH35UDPBF ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IRG7PH35UDPBF into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Power - Max: 180 W
- Switching Energy: 1.06mJ (on), 620µJ (off)
- Input Type: Standard
- Gate Charge: 85 nC
- Td (on/off) @ 25°C: 30ns/160ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 105 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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