GSID080A120B1A5
SemiQ
SemiQ
IGBT MOD 1200V 160A 1710W
$0.00
Available to order
Reference Price (USD)
10+
$58.36300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SemiQ's GSID080A120B1A5 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the GSID080A120B1A5 enables higher power density in MRI gradient amplifiers. Choose SemiQ for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 160 A
- Power - Max: 1710 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microchip Technology
APTGF50DH60T1G
Microchip Technology
APT100GF60JU3
Infineon Technologies
FS200R12A1T4H5BOMA1
Littelfuse Inc.
MG12100W-XN2MM
Powerex Inc.
CM900DU-24NF
Microchip Technology
APTGF50H60T3G
Infineon Technologies
2LS20017E42W40403NOSA1
Infineon Technologies
DDB6U84N16RRBOSA1
Infineon Technologies
6MS20017E43W37032NOSA1
Infineon Technologies