PMPB07R3ENAX
Nexperia USA Inc.
Nexperia USA Inc.
SMALL SIGNAL MOSFET FOR MOBILE
$0.20
Available to order
Reference Price (USD)
1+
$0.20409
500+
$0.2020491
1000+
$0.2000082
1500+
$0.1979673
2000+
$0.1959264
2500+
$0.1938855
Exquisite packaging
Discount
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Meet the PMPB07R3ENAX by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PMPB07R3ENAX stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020M-6
- Package / Case: 6-UDFN Exposed Pad
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