GT50JR22(STA1,E,S)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F IGBT / TRANSISTOR TO-3PN(OS
$4.19
Available to order
Reference Price (USD)
1+
$4.18800
500+
$4.14612
1000+
$4.10424
1500+
$4.06236
2000+
$4.02048
2500+
$3.9786
Exquisite packaging
Discount
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Optimize your power systems with the GT50JR22(STA1,E,S) Single IGBT transistor from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the GT50JR22(STA1,E,S) delivers consistent and reliable operation. Trust Toshiba Semiconductor and Storage's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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