GT30J341,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT TRANS 600V 30A TO3PN
$2.58
Available to order
Reference Price (USD)
1+
$2.57550
500+
$2.549745
1000+
$2.52399
1500+
$2.498235
2000+
$2.47248
2500+
$2.446725
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The GT30J341,Q from Toshiba Semiconductor and Storage is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose GT30J341,Q for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 59 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 230 W
- Switching Energy: 800µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 80ns/280ns
- Test Condition: 300V, 30A, 24Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
Related Products
Infineon Technologies
FZ1600R12HP4NPSA1
IXYS
IXG50I4500KN
IXYS
IXGT6N170A-TRL
Rohm Semiconductor
RGW00TS65DHRC11
Harris Corporation
HGTP6N40E1D
onsemi
STP8057
Harris Corporation
HGTG40N60C3R
Harris Corporation
HGTG12N60C3DR
Renesas Electronics America Inc
RBN50H65T1FPQ-A0#CB0
Renesas Electronics America Inc