GT60N321(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT 1000V 60A 170W TO3P LH
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The GT60N321(Q) Single IGBT transistor by Toshiba Semiconductor and Storage is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the GT60N321(Q) provides consistent performance in varied conditions. Rely on Toshiba Semiconductor and Storage's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
- Power - Max: 170 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 330ns/700ns
- Test Condition: -
- Reverse Recovery Time (trr): 2.5 µs
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(LH)
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