IGC54T65R3QEX1SA1
Infineon Technologies
Infineon Technologies
IGBT CHIP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IGC54T65R3QEX1SA1 from Infineon Technologies is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose IGC54T65R3QEX1SA1 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
Infineon Technologies
SIGC178T65DCEAX7SA2
Infineon Technologies
IRGC10B60KB
onsemi
SFGH25N120FTDS
Infineon Technologies
SIGC25T60NCX1SA7
Infineon Technologies
IRG7CH75K10EF
Infineon Technologies
IRG4CC80UD
IXYS
IXYH12N250C
Infineon Technologies
SIGC14T60SNCX1SA2
Infineon Technologies
IGC18T120T8QX1SA1
Infineon Technologies