H5N3007FL-M0-E#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 300V 15A TO220FL
$3.33
Available to order
Reference Price (USD)
1+
$3.33000
500+
$3.2967
1000+
$3.2634
1500+
$3.2301
2000+
$3.1968
2500+
$3.1635
Exquisite packaging
Discount
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Optimize your power electronics with the H5N3007FL-M0-E#T2 single MOSFET from Renesas Electronics America Inc. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the H5N3007FL-M0-E#T2 combines cutting-edge technology with Renesas Electronics America Inc's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 160mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FL
- Package / Case: TO-220-3 Full Pack
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