HAT2019R-EL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$0.77
Available to order
Reference Price (USD)
1+
$0.77000
500+
$0.7623
1000+
$0.7546
1500+
$0.7469
2000+
$0.7392
2500+
$0.7315
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HAT2019R-EL-E by Renesas Electronics America Inc is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the HAT2019R-EL-E is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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