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HAT2199R-EL-E

Renesas Electronics America Inc
HAT2199R-EL-E Preview
Renesas Electronics America Inc
MOSFET N-CH 30V 11A 8SOP
$0.85
Available to order
Reference Price (USD)
1+
$0.85000
500+
$0.8415
1000+
$0.833
1500+
$0.8245
2000+
$0.816
2500+
$0.8075
Exquisite packaging
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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