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R8003KNXC7G

Rohm Semiconductor
R8003KNXC7G Preview
Rohm Semiconductor
800V 3A, TO-220FM, HIGH-SPEED SW
$2.61
Available to order
Reference Price (USD)
1+
$2.61000
500+
$2.5839
1000+
$2.5578
1500+
$2.5317
2000+
$2.5056
2500+
$2.4795
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack

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