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HAT2261H-EL-E

Renesas Electronics America Inc
HAT2261H-EL-E Preview
Renesas Electronics America Inc
MOSFET N-CH 30V 45A 5LFPAK
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-LFPAK
  • Package / Case: SC-100, SOT-669

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