HGTG18N120BND
onsemi
onsemi
IGBT 1200V 54A 390W TO247
$0.00
Available to order
Reference Price (USD)
1+
$6.74000
10+
$6.07800
450+
$4.77169
900+
$4.30333
1,350+
$3.66241
Exquisite packaging
Discount
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Experience top-tier performance with the HGTG18N120BND Single IGBT transistor from onsemi. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the HGTG18N120BND ensures energy efficiency and reliability. Trust onsemi's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A
- Power - Max: 390 W
- Switching Energy: 1.9mJ (on), 1.8mJ (off)
- Input Type: Standard
- Gate Charge: 165 nC
- Td (on/off) @ 25°C: 23ns/170ns
- Test Condition: 960V, 18A, 3Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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